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| BF543 Vishay Semiconductors N-Channel MOS-Fieldeffect Triode, Depletion Mode Features * * * * * Integrated gate protection diode Low feedback capacitance e3 Low noise figure Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 2 1 3 D G S 19240 Applications High frequency stages up to 300 MHz. Electrostatic sensitive device. Observe precautions for handling. Mechanical Data Case: SOT-23 Plastic case Weight: approx. 8.0 mg Pinning: 1 = Source, 2 = Gate, 3 = Drain Parts Table Part BF543 LD Marking SOT-23 Package Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Drain - source voltage Drain current Gate - source peak current Total power dissipation Channel temperature Storage temperature range Tamb 60 C Test condition Symbol VDS ID IGSM Ptot TCh Tstg Value 20 30 10 200 150 -55 to +150 Unit V mA mA mW C C Maximum Thermal Resistance Parameter Channel ambient 1) 1) Test condition Symbol RthChA Value 450 Unit K/W on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35m Cu Document Number 85072 Rev. 1.5, 05-Jul-05 www.vishay.com 1 BF543 Vishay Semiconductors Electrical DC Characteristics Tamb = 25 C, unless otherwise specified Parameter Drain - source breakdown voltage Gate - source breakdown voltage Gate - source leakage current Drain current Test condition ID = 10 A, -VGS = 4 V IGS = 10 mA, VDS = 0 VGS = 6 V, VDS = 0 VDS = 10 V, VGS = 0 BF543A BF543B Gate - source cut-off voltage VDS = 10 V, ID = 20 A Part Symbol V(BR)DS V(BR)GSS IGSS IDSS IDSS IDSS -VGS(OFF) 1.5 1.5 4.0 Min 20 7.5 12 50 8.0 6.5 8.0 2.5 Typ. Max Unit V V nA mA mA mA V Electrical AC Characteristics Tamb = 25 C, unless otherwise specified VDS = 10 V, ID = 4 mA, f = 1 MHz Parameter Forward transadmittance Gate 1 input capacitance Feedback capacitance Output capacitance Noise figure Power gain GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 2 mS, GL = 0.5 mS, f = 200 MHz Test condition Symbol |y21s| Cissg1 Crss Coss F Gps Min 9.5 Typ. 12 2.7 25 0.9 1.0 22 Max Unit mS pF fF pF dB dB Package Dimensions in mm (Inches) 1.15 (.045) 2.6 (.102) 2.35 (.092) ISO Method E 0.175 (.007) 0.098 (.005) 0.1 (.004) max. 0.4 (.016) 0.4 (.016) 3.1 (.122) 2.8 (.110) 0.4 (.016) Mounting Pad Layout 0.52 (0.020) 0.9 (0.035) 1.43 (.056) 1.20(.047) 2.0 (0.079) 0.95 (.037) 0.95 (.037) 0.95 (0.037) 0.95 (0.037) 17418 www.vishay.com 2 0.95 (.037) Document Number 85072 Rev. 1.5, 05-Jul-05 BF543 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85072 Rev. 1.5, 05-Jul-05 www.vishay.com 3 |
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